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| (R) MJE210 SILICON PNP TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Power Dissipation at T case 25 o C o at T amb 25 C Storage Temperature Max Operating Junction Temperature Value -40 -25 -8 -5 -10 -1 15 1.5 -65 to 150 150 Unit V V V A A A W o o C C 1/4 September 2003 MJE210 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max 83.4 8.34 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -40 V V CB = -40 V V EB = -8 V I C = -10 mA -25 I C = -0.5 A I C = -2 A I C = -5 A I C = -5 A I C =- 2 A I C = -0.5 A I C = -2 A I C = -5 A I C = 0.1 A f = 10 MHz V CB = -10 V IE = 0 I B = -50 mA I B = -0.2 A I B = -1 A I B = -1 A V CE = -1 V V CE = -1 V V CE = -1 V V CE = -2 V V CE = 10 V f = 0.1 MHz 70 45 10 65 120 -0.3 -0.75 -1.8 -2.5 -1.6 V V V V V V T case = 125 o C Min. Typ. Max. -100 -100 -100 Unit nA A nA Collector-Emitter V CEO(sus) Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) V BE h FE fT C CBO Collector-Emitter Sustaining Voltage Base-Emitter on Voltage Base-Emitter on Voltage DC Current Gain 180 Transistor Frequency Collector-base Capacitance MHz pF Pulsed: Pulse duration = 300s, duty cycle 1.5% 2/4 MJE210 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10o 3 7.4 10.5 0.7 0.40 2.4 1.0 15.4 2.2 4.4 3.8 3.2 2.54 0.084 0.05 0.011 10o 0.118 TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 DIM. 1: Base 2: Collector 3: Emitter 0016114/B 3/4 MJE210 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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